Collection: FRAM Click Boards™
Ferroelectric RAM or FRAM is a random access memory using a ferroelectric layer to achieve non-volatility.
FRAM devices are increasingly used to replace Flash memory as they have lower power consumption and faster write cycles. However, their biggest advantage is the maximum number of read/write cycles, often from 1010 to 1014. Data retention times of more than 10 years are also possible.
FRAM devices are more expensive than Flash devices and tend to have a smaller storage capacity.